FPD3000 phemt equivalent, 2w power phemt.
* 32.5 dBm Linear Output Power at 12 GHz
* 6.5 dB Power Gain at 12 GHz
* 8 dB Maximum Stable Gain at 12 GHz
* 42 dBm Output IP3
* 30% Power-Added Effi.
DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60
The FPD3000 is an AlGaAs/InGaAs pseudomorphi.
AND APPLICATIONS
DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by hig.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 213.66KB)